Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology

被引：0

作者：

Mistry, K ^{[1
]}

Armstrong, M ^{[1
]}

Auth, C ^{[1
]}

Cea, S ^{[1
]}

Coan, T ^{[1
]}

Ghani, T ^{[1
]}

Hoffmann, T ^{[1
]}

Murthy, A ^{[1
]}

Sandford, J ^{[1
]}

Shaheed, R ^{[1
]}

Zawadzki, K ^{[1
]}

Zhang, K ^{[1
]}

Thompson, S ^{[1
]}

Bohr, M ^{[1
]}

机构：

[1] Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA

来源：

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2004年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We describe the device physics of uniaxial strained silicon transistors. Uniaxial strain is more effective, less costly and easier to implement. The highest PMOS drive current to date is reported: 0.72mA/mum. Pattern sensitivity and mobility/Rext partitioning are discussed. Finally we measure inverter delays as low as 4.6pS, and show 50Mb SRAMs operational at 0.65V.

引用

页码：50 / 51

页数：2

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