Tailoring the Ti/4H-SiC Schottky barrier by ion irradiation

被引：24
|
作者：
Roccaforte, F [1 ]
Bongiorno, C [1 ]
La Via, F [1 ]
Raineri, V [1 ]
机构：
[1] CNR IMM, Sez Catania, I-95121 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 25期
关键词：
D O I：
10.1063/1.1841476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of ion irradiation on the Ti/4H-SiC Schottky barrier are discussed. The Ti/SiC interfacial region was modified by irradiating Schottky diodes with 8 MeV Si+4 ions at fluences between 1x10(9) and 1x10(12) ions/cm(2). By increasing the ion fluence, an increase of the Schottky barrier Phi(B) occurs, from the value of 1.05 eV after preparation to the value of 1.21 eV after irradiation at a fluence of 1x10(12) ions/cm(2), without substantial changes in the ideality factor (n=1.09). Along with the barrier height increase, a decrease of the leakage current of about two orders of magnitude was observed after irradiation. The results were interpreted in terms of the structural and electrical modification of the interfacial region. (C) 2004 American Institute of Physics.
引用
收藏
页码：6152 / 6154
页数：3
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