Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts

被引：38

作者：

Lee, SeungGeun ^{[1
]}

Forman, Charles A. ^{[2
]}

Kearns, Jared ^{[2
]}

Leonard, John T. ^{[2
]}

Cohen, Daniel A. ^{[2
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 22期

关键词：

DAMAGE;

D O I：

10.1364/OE.27.031621

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report III-nitride vertical-cavity surface-emitting lasers (VCSELs) with buried tunnel junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the aperture followed by n-GaN regrowth for current spreading. Under pulsed operation, a BTJ VCSEL with a 14 mu m diameter aperture showed a lasing wavelength of 430 nm, a threshold current of similar to 20 mA (12 kA/cm(2)), and a maximum output power of 2.8 mW. Under CW operation, an 8 mu m aperture VCSEL showed a differential efficiency of 11% and a peak output power of similar to 0.72 mW. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

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页码：31621 / 31628

页数：8

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