Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions

被引：14
|
作者：
Kiyohara, Kazuki [1 ,2 ]
Odawara, Mahito [1 ]
Takeuchi, Tetsuya [1 ]
Kamiyama, Satoshi [1 ]
Iwaya, Motoaki [1 ]
Akasaki, Isamu [1 ,3 ,4 ]
Saito, Tatsuma [2 ]
机构：
[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[2] Stanley Elect Co Ltd, R&D Labs, Yokohama, Kanagawa 2250014, Japan
[3] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan
[4] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 11期
关键词：
tunnel junctions; vertical-cavity surface-emitting lasers; buried tunnel junctions; nitride; DIODES;
D O I：
10.35848/1882-0786/abbe80
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) with buried GaInN tunnel junctions (TJs). Under room-temperature continuous-wave operation, the VCSEL with an 8 mu m aperture exhibited a low operating voltage of 5.3 V at 10 kA cm(-2)and a differential resistance of 110 omega. In addition, the VCSEL with a 10 mu m aperture showed a threshold current of 14.4 mA and a peak output power of 2.0 mW. An influence of an absorption loss at the GaInN TJ on laser performance was estimated using an analysis of a one-dimensional optical intensity profile based on a cross-sectional STEM image.
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页数：4
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