Deep ridge GaN ew-laser diodes

被引：8

作者：

Dennemarck, J. ^{[1
]}

Tessarek, C. ^{[1
]}

Figge, S. ^{[1
]}

Hommel, D. ^{[1
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, Otto Hahn Allee NW1, D-28213 Bremen, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 | 2007年 / 4卷 / 01期

关键词：

D O I：

10.1002/pssc.200673564

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The processing of homoepitaxial grown GaN based laser diodes by means of chemical assisted ion beam etching (CAIBE) is discussed. These laser diodes, emitting in the blue/UV spectral region, have been processed as buried ridge wave guide structures. Both, the influence of process parameters during etching such as the angle of incidence of the ions and gas fluxes as well as the impact of the ridge depth on the device performance will be analysed. Steep and smooth sidewalls of the ridge have been achieved by optimising the process parameters and by etching the ridge through the active region, cw-lasing has been achieved. (c) 2007 WILFY-VCH Veriag GmbH & Co. KGaA, Weinheim.

引用

页码：78 / +

页数：2

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