GaN-based green laser diodes

被引：93

作者：

Jiang Lingrong ^{[1
,2
]}

Liu Jianping ^{[1
,2
]}

Tian Aiqin ^{[1
,2
]}

Cheng Yang ^{[1
,2
]}

Li Zengcheng ^{[1
,2
]}

Zhang Liqun ^{[1
,2
]}

Zhang Shuming ^{[1
,2
]}

Li Deyao ^{[1
,2
]}

Ikeda, M. ^{[1
,2
]}

Yang Hui ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[2] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2016年 / 37卷 / 11期

基金：

中国国家自然科学基金;

关键词：

green LDs; InGaN; QCSE; In-rich;

D O I：

10.1088/1674-4926/37/11/111001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.

引用

页数：10

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