Wire-cut EDM of SiSiC-Preliminary Investigation in Machining Parameter

Silicon Carbide is a semiconductor material that is becoming popular because of its special characteristic. However, the application of this material is limited due to the difficulty of its machining process. This paper discusses the influence of machining parameters in WEDM of Siliconized Silicon Carbide (SiSiC). Using 2-level full factorial design of experiment, the effect of pulse on-time, pulse off-time, peak current and servo voltage on material removal rate, surface roughness, sparking gap and wire lag were studied. For predicting the machining performance and to represent the relationship, a mathematical model for individual response was developed and validated through a conformation test.