Wire-cut EDM of SiSiC-Preliminary Investigation in Machining Parameter

被引：0

作者：

Rahim, M. Zulafif ^{[1
]}

Yusof, M. S. ^{[1
]}

Rahim, E. A. ^{[1
]}

Ibrahim, Rasidi ^{[1
]}

Mohid, Z. ^{[1
]}

机构：

[1] Univ Tun Hussein Onn Malaysia UTHM, Fac Mech & Mfg Engn, POB 101, Batu Pahat 86400, Johor, Malaysia

来源：

7TH INTERNATIONAL CONFERENCE ON MECHANICAL AND MANUFACTURING ENGINEERING (ICME'16) | 2017年 / 1831卷

关键词：

D O I：

10.1063/1.4981167

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Silicon Carbide is a semiconductor material that is becoming popular because of its special characteristic. However, the application of this material is limited due to the difficulty of its machining process. This paper discusses the influence of machining parameters in WEDM of Siliconized Silicon Carbide (SiSiC). Using 2-level full factorial design of experiment, the effect of pulse on-time, pulse off-time, peak current and servo voltage on material removal rate, surface roughness, sparking gap and wire lag were studied. For predicting the machining performance and to represent the relationship, a mathematical model for individual response was developed and validated through a conformation test.

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页数：9

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