Conduction studies on electrodeposited indium selenide thin films

被引：8
|
作者：
Gopal, S [1 ]
Viswanathan, C [1 ]
Thamilselvan, M [1 ]
Premnazeer, K [1 ]
Narayandass, SK [1 ]
Mangalaraj, D [1 ]
机构：
[1] Bharathiar Univ, Dept Phys, Thin FIlm Lab, Coimbatore 641046, Tamil Nadu, India
来源：
IONICS | 2004年 / 10卷 / 3-4期
关键词：
D O I：
10.1007/BF02382835
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass substrates from a mixture of Indium trichloride (InCl3) and selenium dioxide (SeO2) in aqueous solution by the potentiostatic electrodeposition technique. The InSe films showed that Mott's variable-range hopping conductivity (VRH) is dominant under low field (similar to 2x10(5) Vcm(-1)) condition. At high field the Current-Voltage studies (in the temperature range 300 - 380 K) revealed that the conductivity of Indium selenide thin films is of Poole-Frenkel type. The plot drawn between Ln (IN) and (I/V) showed a straight line and also the experimental data and the theoretical data closely matches. Hence Poole-Frenkel mechanism is confirmed and discussed in detail.
引用
收藏
页码：300 / 303
页数：4
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