Properties of pulse electrodeposited copper indium selenide films

被引：3
|
作者：
Shanmugavel, A. [1 ]
Srinivasan, K. [2 ]
Murali, K. R. [3 ]
机构：
[1] Bharathiar Univ, Ctr Res & Dev, Coimbatore 641046, Tamil Nadu, India
[2] Govt Engn Coll, Dept Phys, Salem, India
[3] CSIR CECRI, ECMS Div, Karaikkudi 630006, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 07期
关键词：
CUINSE2; THIN-FILMS; SELENIZATION; PRECURSORS; DEPOSITION; NICKEL;
D O I：
10.1007/s10854-013-1108-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30-80 degrees C and at 50 % duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. The band gap of the films decreased from 1.17 to 1.05 eV with decrease of duty cycle. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. Room temperature resistivity of the films is in the range of 0.01-2.0 ohm cm. Films deposited at 50 % duty cycle have exhibited a V-oc of 0.59 V, J(sc) of 15 mA cm(-2), FF of 0.75 and efficiency of 6.64 %.
引用
收藏
页码：2398 / 2403
页数：6
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