Properties of pulse electrodeposited copper indium selenide films

被引：3
|
作者：
Shanmugavel, A. [1 ]
Srinivasan, K. [2 ]
Murali, K. R. [3 ]
机构：
[1] Bharathiar Univ, Ctr Res & Dev, Coimbatore 641046, Tamil Nadu, India
[2] Govt Engn Coll, Dept Phys, Salem, India
[3] CSIR CECRI, ECMS Div, Karaikkudi 630006, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 07期
关键词：
CUINSE2; THIN-FILMS; SELENIZATION; PRECURSORS; DEPOSITION; NICKEL;
D O I：
10.1007/s10854-013-1108-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30-80 degrees C and at 50 % duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. The band gap of the films decreased from 1.17 to 1.05 eV with decrease of duty cycle. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. Room temperature resistivity of the films is in the range of 0.01-2.0 ohm cm. Films deposited at 50 % duty cycle have exhibited a V-oc of 0.59 V, J(sc) of 15 mA cm(-2), FF of 0.75 and efficiency of 6.64 %.
引用
收藏
页码：2398 / 2403
页数：6
相关论文
共 50 条
  • [21] OPTICAL-PROPERTIES OF INDIUM SELENIDE FILMS
    SHARMA, TP
    SHARMA, SK
    KUMAR, R
    JAIN, G
    MISRA, SCK
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1990, 28 (08) : 486 - 489
  • [22] Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films
    A. F. Qasrawi
    Fatima M. Aboalrub
    Optical and Quantum Electronics, 2023, 55
  • [23] Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films
    Qasrawi, A. F.
    Aboalrub, Fatima M.
    OPTICAL AND QUANTUM ELECTRONICS, 2023, 55 (12)
  • [24] Photoconductivity in Reactively Evaporated Copper Indium Selenide Thin Films
    Urmila, K. S.
    Asokan, T. Namitha
    Pradeep, B.
    Jacob, Rajani
    Philip, Rachel Reena
    OPTOELECTRONIC MATERIALS AND THIN FILMS (OMTAT 2013), 2014, 1576 : 69 - 72
  • [25] Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
    Murali, K. R.
    Balasubramanian, M.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (09) : 3575 - 3580
  • [26] Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
    K. R. Murali
    M. Balasubramanian
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 3575 - 3580
  • [27] Structural, optical, electrical and photoconducting properties of pulse plated Copper Gallium selenide films
    Chitra, V.
    Vasantha, S.
    Murali, K. R.
    COMPOSITES PART B-ENGINEERING, 2014, 58 : 160 - 165
  • [28] Characteristics of the structure, composition and properties of electrodeposited zinc selenide films
    Klochko, N. P.
    Grigorov, S. N.
    Kopach, V. R.
    Dobrotvorskaya, M. V.
    Mateychenko, P. V.
    FUNCTIONAL MATERIALS, 2006, 13 (03): : 393 - 396
  • [29] Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films
    Yan, Yong
    Li, Shasha
    Yu, Zhou
    Liu, Lian
    Yan, Chuanpeng
    Zhang, Yong
    Zhao, Yong
    OPTICAL MATERIALS, 2014, 38 : 217 - 222
  • [30] Effect of electron beam irradiation on electrodeposited nanostructured copper selenide thin films
    Dhasade, S. S.
    Kadam, A. B.
    Thombare, J. V.
    Fulari, V. J.
    2013 INTERNATIONAL CONFERENCE ON ENERGY EFFICIENT TECHNOLOGIES FOR SUSTAINABILITY (ICEETS), 2013,
12345