Conduction studies on electrodeposited indium selenide thin films

被引：8

作者：

Gopal, S ^{[1
]}

Viswanathan, C ^{[1
]}

Thamilselvan, M ^{[1
]}

Premnazeer, K ^{[1
]}

Narayandass, SK ^{[1
]}

Mangalaraj, D ^{[1
]}

机构：

[1] Bharathiar Univ, Dept Phys, Thin FIlm Lab, Coimbatore 641046, Tamil Nadu, India

来源：

IONICS | 2004年 / 10卷 / 3-4期

关键词：

D O I：

10.1007/BF02382835

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass substrates from a mixture of Indium trichloride (InCl3) and selenium dioxide (SeO2) in aqueous solution by the potentiostatic electrodeposition technique. The InSe films showed that Mott's variable-range hopping conductivity (VRH) is dominant under low field (similar to 2x10(5) Vcm(-1)) condition. At high field the Current-Voltage studies (in the temperature range 300 - 380 K) revealed that the conductivity of Indium selenide thin films is of Poole-Frenkel type. The plot drawn between Ln (IN) and (I/V) showed a straight line and also the experimental data and the theoretical data closely matches. Hence Poole-Frenkel mechanism is confirmed and discussed in detail.

引用

页码：300 / 303

页数：4

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