A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology

被引：5

作者：

Wang Wei ^{[1
]}

Huang Bei-Ju ^{[1
]}

Dong Zan ^{[1
]}

Liu Hai-Jun ^{[1
]}

Zhang Xu ^{[1
]}

Guan Ning ^{[1
]}

Chen Jin ^{[1
]}

Guo Wei-Lian ^{[2
]}

Niu Ping-Juan ^{[2
]}

Chen Hong-Da ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Tianjin Polytech Univ, Sch Informat & Commun, Tianjin 300160, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0256-307X/27/4/048501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A silicon-based field emission light emitting diode for low-voltage operation is fabricated in the standard 0.35 mu m 2P4M salicide complementary metal-oxide-semiconductor (CMOS) technology. Partially overlapping p(+) and n(+) regions with a salicide block layer are employed in this device to constitute a heavily doped p(+)-n(+) junction which has soft "knee" Zener breakdown characteristics, thus its working voltage can be reduced preferably below 5 V, and at the same time the power efficiency is improved. The spectra of this device are spread over 500nm to 1000nm with the main peak at about 722nm and an obvious red shift of the spectra peak is observed with the increasing current through the device. During the emission process, field emission rather than avalanche process plays a major role. Differences between low-voltage Zener breakdown emission and high-voltage avalanche breakdown emission performance are observed and compared.

引用

页数：4

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