Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology.This device is capable of versatile working modes:it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V.An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode.Furthermore,when the gate oxide is broken down,NIR light is emitted from the polysilicon/oxide/silicon structure.Optoelectronic characteristics of the device working in different modes are measured and compared.The mechanisms behind these different emissions are explored.