Heat-treatment induced modifications of porous silicon

被引：0
|
作者：
Dannefaer, S [1 ]
Wiebe, C [1 ]
Kerr, D [1 ]
机构：
[1] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
porous silicon; positron annihilation;
D O I：
10.4028/www.scientific.net/MSF.258-263.1725
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Positron lifetime spectroscopy was used to investigate a porous silicon film subjected to heat treatments in argon atmosphere. After annealings between 300 and 500 degrees C the mass of the film increased by 17% due to oxygen uptake. Vacancy clusters in the silicon oxide layer covering the nano-crystallites increased their concentration by a factor of 3. Above 900 degrees C significant structural changes of the film took place as manifested by growth in the size of vacancy clusters.
引用
收藏
页码：1725 / 1729
页数：5
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