20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology

被引：7
|
作者：
Schmid, R [1 ]
Meister, TF
Neuhauser, M
Felder, A
Bogner, W
Rest, M
Rupeter, J
Rein, HM
机构：
[1] Ruhr Univ Bochum, AG Halbleiterbauelemente, D-44780 Bochum, Germany
[2] Siemens AG, Corp Res & Dev, D-81730 Munich, Germany
[3] Micram Microelect, D-44799 Bochum, Germany
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 13期
关键词：
integrated circuits; amplifiers; silicon-germanium bipolar integrated circuits;
D O I：
10.1049/el:19970791
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A transimpedance preamplifier and a modulator driver used in a 20Gbit/s fibre-optic TDM transmission system are presented. The ICs were fabricated in an advanced SiGe bipolar technology. The amplifier is noted for its high gain (58 dB Omega) and low equivalent input noise current density (similar or equal to 12pA/root Hz) and the driver for its high output voltage swing (2.3 V single-ended, 4.6 V differential).
引用
收藏
页码：1136 / 1137
页数：2
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