A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends

被引：2

作者：

Akbey, Yunus ^{[1
]}

Palatmutcuogullari, Osman ^{[1
]}

机构：

[1] Istanbul Tech Univ, Engn & Technol Inst, Elect & Commun Dept Sci, TR-80626 Istanbul, Turkey

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2013年 / 74卷 / 01期

关键词：

Transimpedance; SiGe; Fiber optic; Amplifier; Optical receiver; Front-end; RECEIVER;

D O I：

10.1007/s10470-012-9949-x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study focuses on 10 Gbit/s differential transimpedance amplifier. At the beginning of the work, the amplifier circuit is deeply analyzed and is optimized for the best phase linearity over the bandwidth resulted in a group delay variation less than 1 ps. The amplifier circuit is designed with 0.35 mu m SiGe heterojunction bipolar transistor BICMOS process. 9 GHz bandwidth, almost 58 dB Omega transimpedance gain with less than 11.18 pA/ averaged input-referred noise current are achieved. Electrical sensitivity is 15 mu A(pp). Power consumption is 71 mW at 3.3 V single power supply.

引用

页码：155 / 162

页数：8

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