A broadband, differential transimpedance amplifier in 0.35 μm SiGe BICMOS technology for 10 Gbit/s fiber optical front-ends

被引：2
|
作者：
Akbey, Yunus [1 ]
Palatmutcuogullari, Osman [1 ]
机构：
[1] Istanbul Tech Univ, Engn & Technol Inst, Elect & Commun Dept Sci, TR-80626 Istanbul, Turkey
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2013年 / 74卷 / 01期
关键词：
Transimpedance; SiGe; Fiber optic; Amplifier; Optical receiver; Front-end; RECEIVER;
D O I：
10.1007/s10470-012-9949-x
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This study focuses on 10 Gbit/s differential transimpedance amplifier. At the beginning of the work, the amplifier circuit is deeply analyzed and is optimized for the best phase linearity over the bandwidth resulted in a group delay variation less than 1 ps. The amplifier circuit is designed with 0.35 mu m SiGe heterojunction bipolar transistor BICMOS process. 9 GHz bandwidth, almost 58 dB Omega transimpedance gain with less than 11.18 pA/ averaged input-referred noise current are achieved. Electrical sensitivity is 15 mu A(pp). Power consumption is 71 mW at 3.3 V single power supply.
引用
收藏
页码：155 / 162
页数：8
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