A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35 mu m CMOS

被引:1
|
作者
Xu Hui [1 ]
Feng Jun [1 ]
Liu Quan [1 ]
Li Wei [1 ]
机构
[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Peoples R China
基金
国家高技术研究发展计划(863计划);
关键词
pre-amplifier; CMOS technology; RGC input stage; DC-cancellation; low power dissipation;
D O I
10.1088/1674-4926/32/10/105003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A 3.125-Gb/s transimpedance amplifier (TIA) for an optical communication system is realized in 0.35 mu m CMOS technology. The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point. In addition, noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dB Omega and -3 dB bandwidth of 2.31 GHz. The measured average input referred noise current spectral density is about 18.8 pA/root Hz. The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS. Under a single 3.3-V supply voltage, the TIA consumes only 58.08 mW, including 20 mW from the output buffer. The whole die area is 465 x 435 mu m(2).
引用
收藏
页数:6
相关论文
共 50 条
  • [1] A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35μm CMOS
    徐晖
    冯军
    刘全
    李伟
    [J]. Journal of Semiconductors, 2011, 32 (10) : 97 - 102
  • [2] An Inductorless Transimpedance Amplifier Design for 10 Gb/s Optical Communication using 0.18-μm CMOS
    Samuel, Lee Bai Song
    Sern, Tan Yung
    Kumar, Thangarasu Bharatha
    Seng, Yeo Kiat
    Li Zhichao
    Yu Xiaopeng
    [J]. 2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2016,
  • [3] 30-Gb/s Low Power Inductorless CMOS Transimpedance Amplifier for Optical Receivers
    Anusha, U.
    Raghu, S.
    Duraiswamy, Punithavathi
    [J]. 2018 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND PHOTONICS (ICMAP), 2018,
  • [4] A 3.125-Gb/s CMOS transmitter for serial data communications
    Zhao, WH
    Wang, ZG
    Shen, Z
    Wu, W
    Zhu, E
    [J]. 2003 5TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS, 2003, : 1033 - 1036
  • [5] A 12.5 Gb/s 0.13-μm CMOS inductorless transimpedance amplifier with 1 pF input capacitance for optical communications
    Parapari, Elmira Semsar
    Parapari, Ehsan Semsar
    Koozehkanani, Ziaddin Daie
    Toofan, Siroos
    [J]. INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2023, 51 (02) : 866 - 879
  • [6] 0.35 mu m CMOS OPTICAL SENSOR FOR AN INTEGRATED TRANSIMPEDANCE CIRCUIT
    Escid, H.
    Attari, M.
    Aidir, M. Ait
    Mechti, W.
    [J]. INTERNATIONAL JOURNAL ON SMART SENSING AND INTELLIGENT SYSTEMS, 2011, 4 (03): : 467 - 481
  • [7] A 10-Gb/s Inductorless Transimpedance Amplifier
    Momeni, Omeed
    Hashemi, Hossein
    Afshari, Ehsan
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2010, 57 (12) : 926 - 930
  • [8] 10-Gb/s 0.13-μm CMOS Inductorless Modified-RGC Transimpedance Amplifier
    Taghavi, Mohammad Hossein
    Belostotski, Leonid
    Haslett, James W.
    Ahmadi, Peyman
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62 (08) : 1971 - 1980
  • [9] 5 Gb/s LOW-NOISE AND HIGH BANDWIDTH 0.35 μm CMOS TRANSIMPEDANCE AMPLIFIER
    Hammoudi, Escid
    Mokhtar, Attari
    [J]. COMPUTATIONAL INTELLIGENCE IN BUSINESS AND ECONOMICS, 2010, 3 : 649 - 656
  • [10] An Inductorless Differential Transimpedance Amplifier Design for 5 GHz Optical Communication using 0.18-μm CMOS
    Samuel, Lee Bai Song
    Kumar, Thangarasu Bharatha
    Qiong, Zou
    Seng, Yeo Kiat
    [J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 1432 - 1435