Application of atomic force microscopy in resist structure evaluation

被引：0
|
作者：
Ruland, T [1 ]
Stefanov, Y [1 ]
Rispal, L [1 ]
Schwalke, U [1 ]
机构：
[1] TU Darmstadt, Inst Halbeitertech, D-64289 Darmstadt, Germany
来源：
MEASURE AND QUALITY CONTROL IN PRODUCTION | 2004年 / 1860卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We evaluated the application of Atomic Force Microscopy (AFM) in conjunction with conventional Scanning Electron Microscope (SEM) based metrology for determining the geometry of non-hardened photoresist structures. As a model for these structures lines of different widths down to 200nm have been fabricated in 300nm thick negative-tone resist layers using electron beam lithography.
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页码：555 / 560
页数：6
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