Application of atomic force microscopy in resist structure evaluation

被引：0

作者：

Ruland, T ^{[1
]}

Stefanov, Y ^{[1
]}

Rispal, L ^{[1
]}

Schwalke, U ^{[1
]}

机构：

[1] TU Darmstadt, Inst Halbeitertech, D-64289 Darmstadt, Germany

来源：

MEASURE AND QUALITY CONTROL IN PRODUCTION | 2004年 / 1860卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We evaluated the application of Atomic Force Microscopy (AFM) in conjunction with conventional Scanning Electron Microscope (SEM) based metrology for determining the geometry of non-hardened photoresist structures. As a model for these structures lines of different widths down to 200nm have been fabricated in 300nm thick negative-tone resist layers using electron beam lithography.

引用

页码：555 / 560

页数：6

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