Enhanced ferroelectric properties of nitrogen-doped Bi4Ti3O12 thin films

被引：35

作者：

Irie, H ^{[1
]}

Saito, H ^{[1
]}

Ohkoshi, S ^{[1
]}

Hashimoto, K ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 04期

关键词：

D O I：

10.1002/adma.200400957

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric nitrogen-doped Bi4Ti3O12 (BIT) and nitrogen-substituted BIT (N-BIT) thin films are prepared by an radiofrequency-magnetron-sputtering method such that nitrogen atoms are incorporated into oxygen sites. The remnant polarization P-r and the coercive field E-c of the nitrogen-doped BIT are enhanced relative to those of the undoped BIT (Figure). The leakage current of the nitrogen-doped BIT decreases and the fatigue properties improves compared to the undoped BIT.

引用

页码：491 / +

页数：5

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