Improved ferroelectric and fatigue properties in Zr doped Bi4Ti3O12 thin films

被引：0
|
作者：
机构：
[1] Chen, Jieyu
[2] Yun, Qi
[3] Gao, Wei
[4] Bai, Yulong
[5] Nie, Chenghong
[6] Zhao, Shifeng
来源：
Zhao, Shifeng (zhsf@imu.edu.cn) | 1600年 / Elsevier B.V., Netherlands卷 / 136期
基金：
中国国家自然科学基金;
关键词：
Ferroelectricity - Bismuth compounds - Gelation - Zirconium compounds - Virtual storage - Ferroelectric films - Zirconium - Semiconductor doping - Titanium compounds;
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摘要：
Single-phase pure and Zr doped Bi4Ti3O12 thin films have been prepared via the solution-gelation technique. It shows that ferroelectric properties are enhanced obviously after doping Zr. Such improved ferroelectric properties are attributed to the lattice parameter change, which leads to ionic displacement and octahedral distortion after doping Zr. Meanwhile, the fatigue behaviors of the present films were improved obviously after doping Zr. The present work provides an available way of enhancing ferroelectric polarization and fatigue properties of Bi4Ti3O12 based thin films and accelerating its application in ferroelectric storage devices. © 2014 Elsevier B.V.All rights reserved.
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