Microstructure and properties of ferroelectric Bi4Ti3O12 thin films

被引:4
|
作者
Jiang, B [1 ]
Peng, JL
Bursill, LA
机构
[1] Univ Melbourne, Sch Phys, Parkville, Vic 3053, Australia
[2] Shandong Univ, Inst Crystal Mat, Jinan 250100, Shandong, Peoples R China
来源
MODERN PHYSICS LETTERS B | 1999年 / 13卷 / 26期
基金
澳大利亚研究理事会;
关键词
D O I
10.1142/S0217984999001147
中图分类号
O59 [应用物理学];
学科分类号
摘要
The film morphology and defect structure of ferroelectric bismuth titanate thin films are studied by high resolution transmission electron microscopy. As-grown and RTA-processed thin films have similar defect structures, consisting of stacking faults and complex intergrowth defect structures. The as-grown specimens prepared at low temperature had smaller particle size with higher density of these defects compared to RTA-processed samples. Detailed atomic structure models for the stacking faults and intergrowth defect structures are proposed and the computer-simulated images are compared with experiment.
引用
收藏
页码:933 / 945
页数:13
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