Spin transfer torque magnetic random-access memory: towards sub-10 nm devices

被引：0

作者：

Perrissin, N. ^{[1
]}

Lequeux, S. ^{[1
]}

Strelkov, N. ^{[1
]}

Vila, L. ^{[1
]}

Buda-Prejbeanu, L. ^{[1
]}

Auffret, S. ^{[1
]}

Sousa, R. C. ^{[1
]}

Prejbeanu, I. L. ^{[1
]}

Dieny, B. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,INAC SPINTEC, F-38000 Grenoble, France

来源：

2018 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2018) | 2018年

关键词：

Spin transfer torque; Random access memory; Perpendicular anisotropy; Shape anisotropy; Downsize scalability; PERPENDICULAR-ANISOTROPY; ROOM-TEMPERATURE; MAGNETORESISTANCE; INPLANE;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present a new approach to increase the downsize scalability of perpendicular STT-MRAM. It is achieved by increasing the thickness of the free layer in order to induce a perpendicular shape anisotropy (PSA). Therefore, in PSA-STT-MRAM, the perpendicular anisotropy mainly arises from the shape of the storage layer and no longer from an interfacial anisotropy with the tunnel barrier. This approach allows to easily tune the stability of the memory point just by changing the aspect ratio (thickness / diameter) of the storage layer. The paper is mainly focused on presenting the theory of PSA-MRAM and briefly discusses practical realizations of such devices.

引用

页码：125 / 128

页数：4

共 50 条

[21] Spin-transfer torque switched magnetic tunnel junctions in magnetic random access memory
Sun, Jonathan Z.
[J]. SPINTRONICS IX, 2016, 9931
[22] A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology
Min, Tai
Chen, Qiang
Beach, Robert
Jan, Guenole
Horng, Cheng
Kula, Witold
Torng, Terry
Tong, Ruth
Zhong, Tom
Tang, Denny
Wang, Pokang
Chen, Mao-min
Sun, J. Z.
Debrosse, J. K.
Worledge, D. C.
Maffitt, T. M.
Gallagher, W. J.
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2010, 46 (06) : 2322 - 2327
[23] Precessional reversal in orthogonal spin transfer magnetic random access memory devices
Liu, H.
Bedau, D.
Backes, D.
Katine, J. A.
Kent, A. D.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (03)
[24] PAC Code Construction for Spin-Torque Transfer Magnetic Random Access Memory
Dai, Bin
Mei, Zhen
Cai, Kui
Kong, Lingjun
Zhong, Xingwei
[J]. 2023 IEEE INTERNATIONAL MAGNETIC CONFERENCE, INTERMAG, 2023,
[25] Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM)
Apalkov, Dmytro
Khvalkovskiy, Alexey
Watts, Steven
Nikitin, Vladimir
Tang, Xueti
Lottis, Daniel
Moon, Kiseok
Luo, Xiao
Chen, Eugene
Ong, Adrian
Driskill-Smith, Alexander
Krounbi, Mohamad
[J]. ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS, 2013, 9 (02)
[26] Origin of the Resistance-Area-Product Dependence of Spin-Transfer-Torque Switching in Perpendicular Magnetic Random-Access Memory Cells
Mihajlovic, G.
Smith, N.
Santos, T.
Li, J.
Tran, M.
Carey, M.
Terris, B. D.
Katine, J. A.
[J]. PHYSICAL REVIEW APPLIED, 2020, 13 (02)
[27] Challenges for sub-10 nm CMOS devices
Mogami, Tohru
Wakabayashi, Hitoshi
[J]. 2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS, 2006, : 125 - 127
[28] Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy
Nowak, J. J.
Robertazzi, R. P.
Sun, J. Z.
Hu, G.
Abraham, David W.
Trouilloud, P. L.
Brown, S.
Gaidis, M. C.
O'Sullivan, E. J.
Gallagher, W. J.
Worledge, D. C.
[J]. IEEE MAGNETICS LETTERS, 2011, 2
[29] Spin Torque Random Access Memory Down to 22 nm Technology
Wang, Xiaobin
Chen, Yiran
Li, Hai
Dimitrov, Dimitar
Liu, Harry
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2008, 44 (11) : 2479 - 2482
[30] Progress and Prospects of Spin Transfer Torque Random Access Memory
Chen, E.
Apalkov, D.
Driskill-Smith, A.
Khvalkovskiy, A.
Lottis, D.
Moon, K.
Nikitin, V.
Ong, A.
Tang, X.
Watts, S.
Kawakami, R.
Krounbi, M.
Wolf, S. A.
Poon, S. J.
Lu, J. W.
Ghosh, A. W.
Stan, M.
Butler, W.
Mewes, Tim
Gupta, S.
Mewes, C. K. A.
Visscher, P. B.
Lukaszew, R. A.
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2012, 48 (11) : 3025 - 3030

← 1 2 3 4 5 →