Spin transfer torque magnetic random-access memory: towards sub-10 nm devices

被引：0
|
作者：
Perrissin, N. [1 ]
Lequeux, S. [1 ]
Strelkov, N. [1 ]
Vila, L. [1 ]
Buda-Prejbeanu, L. [1 ]
Auffret, S. [1 ]
Sousa, R. C. [1 ]
Prejbeanu, I. L. [1 ]
Dieny, B. [1 ]
机构：
[1] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,INAC SPINTEC, F-38000 Grenoble, France
来源：
2018 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2018) | 2018年
关键词：
Spin transfer torque; Random access memory; Perpendicular anisotropy; Shape anisotropy; Downsize scalability; PERPENDICULAR-ANISOTROPY; ROOM-TEMPERATURE; MAGNETORESISTANCE; INPLANE;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
We present a new approach to increase the downsize scalability of perpendicular STT-MRAM. It is achieved by increasing the thickness of the free layer in order to induce a perpendicular shape anisotropy (PSA). Therefore, in PSA-STT-MRAM, the perpendicular anisotropy mainly arises from the shape of the storage layer and no longer from an interfacial anisotropy with the tunnel barrier. This approach allows to easily tune the stability of the memory point just by changing the aspect ratio (thickness / diameter) of the storage layer. The paper is mainly focused on presenting the theory of PSA-MRAM and briefly discusses practical realizations of such devices.
引用
收藏
页码：125 / 128
页数：4
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