Interconnects Scaling Challenge for Sub-20nm Spin Torque Transfer Magnetic Random Access Memory Technology

被引：0

作者：

Min, Tai ^{[1
]}

Tokei, Zsolt ^{[1
]}

Kar, Gouri Sankar ^{[1
]}

Coseman, Stefan ^{[1
]}

Bekaert, Joost ^{[1
]}

Raghavan, Praveen ^{[1
]}

Cornelissen, Sven ^{[1
]}

Xu, Kaidong ^{[1
]}

Souriau, Laurent ^{[1
]}

Radisic, Dunja ^{[1
]}

Swerts, Johan ^{[1
]}

Tahmasebi, Taiebeh ^{[1
]}

Mertens, Sofie ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

2014 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC) | 2014年

关键词：

PERPENDICULAR-ANISOTROPY; TUNNEL BARRIERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scaling challenges of STT-MRAM read operation down to sub-20nm is discussed. Various contributing factors to the MTJ cell resistance variation were investigated with focus on MRAM cell variation due to lithography patterning technique and interconnects. With EUV SADP or single print process, the MRAM cell size can be scaled down to 18nm physical dimension with 4.2% sigma/ave cell area variation. For interconnects, the increasing resistance variation with shrinking dimensions poses most of the challenges.

引用

页码：341 / 343

页数：3

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