Performance of magnetic tunnel junctions prepared by combined natural and remote oxidation methods for the application of magnetic random access memory

被引：0
|
作者：
Yoon, KS [1 ]
Yang, JY [1 ]
Choi, WJ [1 ]
Kim, YD [1 ]
Kim, CO [1 ]
Hong, JP [1 ]
机构：
[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2003年 / 42卷
关键词：
MTJ; MRAM; remote oxidation;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A combined natural and remote oxidation method for insulating AlOx, barriers was carried out to effectively enhance electrical and structural properties of magnetic tunnel junctions (MTJ). This combined process was intentionally, taken to reduce the oxidation time and to increase reactive oxygen concentration at high power operation. Experimental results indicated that the electrical breakdown voltage and magnetoresistance of the MTJ were increased from 0.8 V to 1.1 V and about 21%, respectively. In addition, the bias voltage dependence of magnetoresistance was improved up to 400 mV at a half e level of initial magnetoresistance value due to the structural enhancement.
引用
收藏
页码：S195 / S198
页数：4
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