Performance of magnetic tunnel junctions with ultra-thin AlOx tunnel barriers formed by remote oxidation process

被引：0
|
作者：
Koo, JH [1 ]
Yoon, KS [1 ]
Kim, YD [1 ]
Kim, KW [1 ]
Shin, JI [1 ]
Lee, JH [1 ]
Kim, CO [1 ]
Hong, JP [1 ]
机构：
[1] Hanyang Univ, New Funct Mat & Devices Lab, Seoul 133791, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 45卷 / 03期
关键词：
magnetic tunnel junction; AlOx tunnel barrier; remote oxidation process; surface plasmon spectroscopy (SPRS);
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An ultra-thin AlOx tunnel barrier was prepared to obtain high quality of magnetic tunnel junctions (MTJs) using a remote rf oxidation process. The tunnel barrier was schematically investigated as a function of mixed gas ratio with Ar and O-2, and various oxidation times. Electrical breakdown voltage and magneto-resistance of MTJs were about 1.2 V and 22 %, respectively. Especially the dielectric properties of our tunnel barriers were optically analyzed by using a surface plasmon resonance spectroscopy (SPRS) to observe the oxidation state inside the barrier. The observed SPRS result exhibits that the AlOx, tunnel barrier was a bulk-property of Al2O3 at optimum oxidation time of 75 s, resulting in the highest magnetoreistance.
引用
收藏
页码：680 / 682
页数：3
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