1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide

被引：33
|
作者：
Han, HS
Seo, SY
Shin, JH
Kim, DS
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
[2] Samsung Elect, Engn & R&D Grp, Suwon, Kyungki Do, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 04期
关键词：
D O I：
10.1063/1.1304838
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
1.54 mu m Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Optimum Er3+ luminescence was obtained after an anneal of at least 5 min at 950 degrees C, and at least 1 at. % excess silicon in SRSO was necessary for the excitation of erbium to be dominated by carriers. The refractive index and the bulk waveguide loss of erbium-doped SRSO film with 0.1 at. % erbium and 1 at. % excess silicon after the optimal anneal treatment was 1.4817 and 4.0 dB/cm, respectively. Fabrication of an erbium-doped SRSO strip waveguide using the standard Si processing techniques and the guiding of internal 1.54 mu m Er3+ emission by such a strip waveguide are demonstrated. (C) 2000 American Institute of Physics. [S0021-8979(00)01215-9].
引用
收藏
页码：2160 / 2162
页数：3
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