Submicrosecond fluorescence dynamics in erbium-doped silicon-rich silicon oxide multilayers

被引：7

作者：

Al Choueiry, A. ^{[1
]}

Jurdyc, A. M. ^{[1
]}

Jacquier, B. ^{[1
]}

Gourbilleau, F. ^{[2
]}

Rizk, R. ^{[2
]}

机构：

[1] Univ Lyon 1, CNRS, LPCML, F-69622 Villeurbanne, France

[2] Univ Caen, CIMAP, UMR CNRS CEA ENSICAEN, F-14050 Caen, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 05期

关键词：

amorphous semiconductors; doping; elemental semiconductors; erbium; fluorescence; high-speed optical techniques; infrared spectra; multilayers; nanoparticles; silicon; silicon compounds; visible spectra; SI NANOCRYSTALS; ENERGY-TRANSFER; OPTICAL-PROPERTIES; ER IONS; PHOTOLUMINESCENCE; SIO2-FILMS;

D O I：

10.1063/1.3211319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy transfer process between amorphous silicon nanoparticles and erbium ions in Er-doped silicon-rich silicon oxide is investigated by fluorescence dynamics measurements. A fast decay is observed in the wavelength range of the radiative relaxation of erbium excited ions at 1.53 mu m. Alternatively to a previous interpretation, we assign this fast decay to emission of deep traps induced by Si-based sensitizers of Er(3+) ions, which emit in the visible and the infrared region.

引用

页数：5

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