Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance

被引:2
|
作者
Riera-Galindo, Sergi [1 ]
Chen, Lijia [1 ]
Serena Maglione, Maria [1 ]
Zhang, Qiaoming [1 ]
Bromley, Stefan T. [2 ,3 ,4 ]
Rovira, Concepcio [1 ]
Mas-Torrent, Marta [1 ]
机构
[1] Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain
[2] Univ Barcelona, Dept Ciencia Mat & Quim Fis, C Marti i Franques 1-11, Barcelona 08028, Spain
[3] Univ Barcelona, Inst Quim Teor & Computatc IQTCUB, C Marti i Franques 1-11, Barcelona 08028, Spain
[4] Inst Catalana Recerca & Estudis Avancats ICREA, Passeig Lluis Co 23, Barcelona 08010, Spain
来源
关键词
SAM; OFET; Small molecule semiconductor; Surface functionalization; Electroactive organic radical; THRESHOLD VOLTAGE; DENSITY;
D O I
10.1007/s00339-022-05429-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The performance of organic field-effect transistors (OFETs) is determined by the semiconductor/dielectric interface. In this work, we report the functionalization of an OFET dielectric with a novel electroactive self-assembled monolayer (SAM) based on a polychlorotriphenylmethyl (PTM) radical derivative and its alpha H non electroactive counterpart. The influence of these SAMs on p- and n-type OFETs is explored. We observe that differences in the accessibility of the electronic energy levels of the PTM derivatives has a significant impact on the device performance. Both SAMs are hydrophobic, which lead to smoother pentacene films. In addition, the radical electroactive SAMs act as p-dopant in pentacene transistors and as charge trap in fullerene C-60 OFETs. This approach can be useful for fabricating organic electronic devices with tailored properties.
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页数:7
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