Self-assembled molecular monolayers as ultrathin gate dielectric in carbon nanotube transistors

被引:18
|
作者
Robert, Gael [1 ]
Derycke, Vincent [1 ]
Goffman, Marcelo F. [1 ]
Lenfant, Stephane [1 ,2 ]
Vuillaume, Dominique [2 ]
Bourgoin, Jean-Philippe [1 ]
机构
[1] CEA, CNRS, Serv Phys Etat Condense, IRAMIS,Lab Elect Mol,URA 2464, F-91191 Gif Sur Yvette, France
[2] Inst Elect Microelect & Nanotechnol, CNRS, Mol Nanostruct & Devices Grp, F-59652 Villeneuve Dascq, France
关键词
D O I
10.1063/1.2992586
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the use of a self-assembled monolayer of octadecanethiol on gold as thin gate dielectric for a single-walled carbon nanotube field-effect transistor. P-type transistors display very steep subthreshold slopes, greatly reduced hysteresis, and band-to-band tunneling. The suppression of the gate efficiency for n-type transistors emphasizes the key role of the electrical dipole of the molecular layer in controlling the switching. Combining the versatility of organic dielectrics with the exceptional electronic and mechanical properties of carbon nanotubes opens interesting ways toward the realization of fully organic nanoscale transistors. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2992586]
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页数:3
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