Electrostatic mechanism of a wavy microrelief formation on a semiconductor surface sputtered by an ion beam

被引：3
|
作者：
Grigor'ev, AI [1 ]
机构：
[1] Yaroslavl State Univ, Yaroslavl, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 11期
关键词：
D O I：
10.1134/1.1329689
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that modeling of a physical mechanism of the formation of an ordered wavy microrelief on the semiconductor surface under the action of a high-energy ion beam can be considered as an electrostatic problem. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：977 / 979
页数：3
相关论文
共 50 条
  • [41] Formation of stationary surface structures during ion beam sputtering
    Lysenko, I. O.
    Kharchenko, V. O.
    Kokhan, S. V.
    Dvornichenko, A. V.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2013, 35 (06): : 763 - 781
  • [42] Argon ion beam induced surface pattern formation on Si
    Hofsaess, H.
    Bobes, O.
    Zhang, K.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (03)
  • [43] Nanoporous structure formation on the surface of Ge by ion beam irradiation
    Oishi, Tomoya
    Nitta, Noriko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (09)
  • [44] Surface morphology for ion-beam sputtered A1 layer with varying sputtering conditions
    Paul, Amitesh
    Wingbermuehle, Jorg
    APPLIED SURFACE SCIENCE, 2006, 252 (23) : 8151 - 8155
  • [45] Ion beam sputtered ultra-thin and nanostructured Ag films for surface plasmon applications
    Brahma, Rajeeb
    Krishna, M. Ghanashyam
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (08): : 1493 - 1497
  • [46] Growth and surface morphology of ion-beam sputtered Ti-Ni thin films
    Rao, Ambati Pulla
    Sunandana, C. S.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (08): : 1517 - 1521
  • [47] Lead-silicate glass surface sputtered by an argon cluster ion beam investigated by XPS
    Zemek, J.
    Jiricek, P.
    Houdkova, J.
    Jurek, K.
    Gedeon, O.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2017, 469 : 1 - 6
  • [48] EFFECT OF ION-BEAM PARAMETERS ON THE TEMPERATURE OF THE SURFACE-LAYER OF THE SAMPLE BEING SPUTTERED
    NAZAROV, VG
    VINOGRADOV, AM
    SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1988, 55 (01): : 37 - 39
  • [49] Application of ion-beam-sputtered Al films to ultrathin surface acoustic wave devices
    Kamijo, Atsushi
    Mitsuzuka, Tsutomu
    Yamamoto, Yasushi
    Tomotsune, Kaoru
    Tamichi, Shigeru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (5 B): : 2346 - 2350
  • [50] Influence of type of bonds in compounds on the mechanism of the sputtered excited particles formation under ion bombardment
    Bobkov V.V.
    Gritsyna V.V.
    Gritsyna V.T.
    Afanasieva I.A.
    Shevchenko D.I.
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2016, 10 (6) : 1239 - 1265
12345