Electrostatic mechanism of a wavy microrelief formation on a semiconductor surface sputtered by an ion beam

被引：3
|
作者：
Grigor'ev, AI [1 ]
机构：
[1] Yaroslavl State Univ, Yaroslavl, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 11期
关键词：
D O I：
10.1134/1.1329689
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that modeling of a physical mechanism of the formation of an ordered wavy microrelief on the semiconductor surface under the action of a high-energy ion beam can be considered as an electrostatic problem. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：977 / 979
页数：3
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