Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

被引：21
|
作者：
Gallacher, K. [1 ]
Ballabio, A. [2 ]
Millar, R. W. [1 ]
Frigerio, J. [2 ]
Bashir, A. [3 ]
MacLaren, I. [3 ]
Isella, G. [2 ]
Ortolani, M. [4 ]
Paul, D. J. [1 ]
机构：
[1] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
[2] Politecn Milan, Dipartimento Fis, L NESS, Polo Terr Como, Via Anzani 42, I-22100 Como, Italy
[3] Univ Glasgow, Sch Phys & Astron, Kelvin Bldg,Univ Ave, Glasgow G12 8QQ, Lanark, Scotland
[4] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, Viale Regina Elena 291, I-00161 Rome, Italy
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 09期
基金：
英国工程与自然科学研究理事会;
关键词：
SILICON; TRANSITIONS; WAVELENGTH; DEPENDENCE;
D O I：
10.1063/1.4943145
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 mu m wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8-13 mu m. (C) 2016 AIP Publishing LLC.
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页数：4
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