Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

被引：25
|
作者：
Diehl, L [1 ]
Sigg, H
Dehlinger, G
Grützmacher, D
Müller, E
Gennser, U
Sagnes, I
Fromherz, T
Campidelli, Y
Kermarrec, O
Bensahel, D
Faist, J
机构：
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] CNRS, LPN, F-91960 Marcoussis, France
[3] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
[4] STMicroelectronics, F-38926 Crolles, France
[5] Univ Neuchatel, CH-2000 Neuchatel, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期
关键词：
D O I：
10.1063/1.1476723
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from lambda=5.3 mum to as short as 3.8 mum. Excellent overall agreement with a 6 band k.p calculation is obtained, proving the accuracy of recently predicted values of band offsets. (C) 2002 American Institute of Physics.
引用
收藏
页码：3274 / 3276
页数：3
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