Anticrossing between heavy-hole states in Si0.2Ge0.8/Si-coupled quantum wells grown on Si0.5Ge0.5 pseudosubstrate

被引：3
|
作者：
Diehl, L
Borak, A
Mentese, S
Grützmacher, D
Sigg, H
Gennser, U
Sagnes, I
Campidelli, Y
Kermarrec, O
Bensahel, D
Faist, J
机构：
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] CNRS, LPN, F-91960 Marcoussis, France
[3] STMelect, F-38926 Crolles, France
[4] Univ Neuchatel, CH-2000 Neuchatel, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1691173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Intersubband absorption measurements were performed on a single repetition of coupled Si0.2Ge0.8/Si quantum wells grown on a Si0.5Ge0.5 pseudosubstrate. Two resonances observed at low temperature are identified with the optical transitions between the ground and the first excited heavy-hole states confined in the coupled wells through their anticrossing behavior. The measured coupling energy agrees well with calculated values. In addition, the Stark shift of a diagonal resonance between a heavy- and light-hole level was observed. (C) 2004 American Institute of Physics.
引用
收藏
页码：2497 / 2499
页数：3
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