Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy

被引：15

作者：

Ouattara, L ^{[1
]}

Mikkelsen, A ^{[1
]}

Lundgren, E ^{[1
]}

Borgström, M ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

NANOTECHNOLOGY | 2004年 / 15卷 / 12期

关键词：

D O I：

10.1088/0957-4484/15/12/001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on cross-sectional scanning tunnelling microscopy (XSTM) measurements on vertically stacked InAs quantum dots in InP barriers. We have investigated two-, five- and tenfold stacked quantum dot structures,grown by low-pressure metal-organic vapour phase epitaxy. The XSTM images reveal that the quantum dots are generally vertically well aligned, and have a truncated pyramidal shape in agreement with similar studies of InAs dots in GaAs. STM images displaying atomic resolution indicate that the dots have a pure InAs stoichiometry, with intermixing only occurring in the top and bottom dot rows. Further, we have investigated various anomalies (considered as defects) as observed in the quantum dot stacks. The origins of these anomalies are discussed and compared to theoretical predictions available so far.

引用

页码：1701 / 1707

页数：7

共 50 条

[21] Enhanced group-V intermixing in InGaAs InP quantum wells studied by cross-sectional scanning tunneling microscopy
Chen, HJ
Feenstra, RM
Piva, PG
Goldberg, RD
Mitchell, IV
Aers, GC
Poole, PJ
Charbonneau, S
APPLIED PHYSICS LETTERS, 1999, 75 (01) : 79 - 81
[22] Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
Krammel, C. M.
Roy, M.
Tilley, J.
Maksym, P. A.
Zhang, L. Y.
Wang, P.
Wang, K.
Li, Y. Y.
Wang, S. M.
Koenraad, P. M.
PHYSICAL REVIEW MATERIALS, 2017, 1 (03):
[23] Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy
Bruls, DM
Vugs, JWAM
Koenraad, PM
Salemink, HWM
Wolter, JH
Hopkinson, M
Skolnick, MS
Long, F
Gill, SPA
APPLIED PHYSICS LETTERS, 2002, 81 (09) : 1708 - 1710
[24] Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy
Lenz, A
Eisele, H
Timm, R
Becker, SK
Sellin, RL
Pohl, UW
Bimberg, D
Dähne, M
APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3848 - 3850
[25] Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Zhao, Z. Y.
Zhang, W. M.
Yi, C.
Stiff-Roberts, A. D.
Rodriguez, B. J.
Baddorf, A. P.
2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 32 - +
[26] Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Zhao, Z. Y.
Zhang, W. M.
Yi, C.
Stiff-Roberts, A. D.
Rodriguez, B. J.
Baddorf, A. P.
APPLIED PHYSICS LETTERS, 2008, 92 (09)
[27] Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Zhao, Z. Y.
Zhang, W. M.
Yi, C.
Stiff-Roberts, A. D.
Rodriguez, B. J.
Baddorf, A. P.
APPLIED PHYSICS LETTERS, 2008, 92 (08)
[28] Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence
Håkanson, U
Johansson, MKJ
Persson, J
Johansson, J
Pistol, ME
Montelius, L
Samuelson, L
APPLIED PHYSICS LETTERS, 2002, 80 (03) : 494 - 496
[29] GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
Smakman, E. P.
Garleff, J. K.
Young, R. J.
Hayne, M.
Rambabu, P.
Koenraad, P. M.
APPLIED PHYSICS LETTERS, 2012, 100 (14)
[30] Cross-sectional STM study of InAs quantum dots for laser devices
Eisele, H
Flebbe, O
Kalka, T
Dähne-Prietsch, M
SURFACE AND INTERFACE ANALYSIS, 1999, 27 (5-6) : 537 - 541

← 1 2 3 4 5 →