Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy

被引：10
|
作者：
Zhao, Z. Y. [1 ]
Zhang, W. M. [1 ]
Yi, C. [1 ]
Stiff-Roberts, A. D. [1 ]
Rodriguez, B. J. [2 ]
Baddorf, A. P. [2 ]
机构：
[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2889938
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multilayer InAs/GaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct doping (in InAs QD layers) and remote doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests that large band bending occurs due to highly doped, remote-doping layers, thereby causing electron redistribution in direct-doping layers. The experimental result is supported by a band structure calculation using the Schrodinger-Poisson method by NEXTNANO3. (C) 2008 American Institute of Physics.
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页数：3
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