Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy

被引：10
|
作者：
Zhao, Z. Y. [1 ]
Zhang, W. M. [1 ]
Yi, C. [1 ]
Stiff-Roberts, A. D. [1 ]
Rodriguez, B. J. [2 ]
Baddorf, A. P. [2 ]
机构：
[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2889938
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multilayer InAs/GaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct doping (in InAs QD layers) and remote doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests that large band bending occurs due to highly doped, remote-doping layers, thereby causing electron redistribution in direct-doping layers. The experimental result is supported by a band structure calculation using the Schrodinger-Poisson method by NEXTNANO3. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Cross-sectional scanning tunneling microscopy characterization of cubic GaN epilayers grown on (001) GaAs
    Kazama, T
    Yasunaga, F
    Taniyasu, Y
    Jia, A
    Kato, Y
    Kobayashi, M
    Yoshikawa, A
    Takahashi, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 180 (01): : 345 - 350
  • [32] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF EPITAXIAL GAAS STRUCTURES
    VATERLAUS, A
    FEENSTRA, RM
    KIRCHNER, PD
    WOODALL, JM
    PETTIT, GD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1502 - 1508
  • [33] Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions
    Dong, Y
    Feenstra, RM
    Semtsiv, MP
    Masselink, WT
    APPLIED PHYSICS LETTERS, 2004, 84 (02) : 227 - 229
  • [34] A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures
    Timm, R.
    Lenz, A.
    Grabowski, J.
    Eisele, H.
    Daehne, M.
    Microscopy of Semiconducting Materials, 2005, 107 : 479 - 482
  • [35] Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasers
    Cobley, R. J.
    Teng, K. S.
    Maffeis, T. G. G.
    Wilks, S. P.
    SURFACE SCIENCE, 2006, 600 (14) : 2857 - 2859
  • [36] Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
    Sobolev, MM
    Kovsh, AR
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Musikhin, YG
    SEMICONDUCTORS, 1999, 33 (02) : 157 - 164
  • [37] Investigation of capacitance for InAs/GaAs quantum dot solar cells by photoreflectance
    Farzin, Behnam Zeinalvand
    Kim, Jong Su
    Kim, Geun Hyeong
    Lee, Dongkun
    Han, Im Sik
    Lee, Sang Jun
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (05):
  • [38] Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
    M. M. Sobolev
    A. R. Kovsh
    V. M. Ustinov
    A. Yu. Egorov
    A. E. Zhukov
    Yu. G. Musikhin
    Semiconductors, 1999, 33 : 157 - 164
  • [39] Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy
    Ulloa, J. M.
    Bozkurt, M.
    Koenraad, P. M.
    SOLID STATE COMMUNICATIONS, 2009, 149 (35-36) : 1410 - 1418
  • [40] Capping of InAs quantum dots grown on (311)B InP studied by cross-sectional scanning tunneling microscopy
    Celebi, C.
    Ulloa, J. M.
    Koenraad, P. M.
    Simon, A.
    Letoublon, A.
    Bertru, N.
    APPLIED PHYSICS LETTERS, 2006, 89 (02)
12345