A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

被引：5
|
作者：
Begon-Lours, Laura [1 ]
Halter, Mattia [1 ,2 ]
Pineda, Diana Davila [1 ]
Popoff, Youri [1 ,2 ]
Bragaglia, Valeria [1 ]
La Porta, Antonio [1 ]
Jubin, Daniel [1 ]
Fompeyrine, Jean [1 ,3 ]
Offrein, Bert Jan [1 ]
机构：
[1] IBM Res GmbH, Ruschlikon, Switzerland
[2] Swiss Fed Inst Technol, Zurich, Switzerland
[3] Lumiphase AG, Zurich, Switzerland
来源：
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金：
欧盟地平线“2020”;
关键词：
Ferroelectric; Memristor; Resistive Switching;
D O I：
10.1109/EDTM50988.2021.9420886
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (similar to 375 degrees C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory
    Begori-Lours, L.
    Halter, M.
    Pirieda, D. Davila
    Bragaglia, V
    Popoff, Y.
    La Porta, A.
    Jubiri, D.
    Fompeyririe, J.
    Offreiri, B. J.
    [J]. 2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), 2021, : 36 - 39
  • [2] MNOS/CCD NON-VOLATILE ANALOG MEMORY
    WITHERS, RS
    SILVERSMITH, DJ
    MOUNTAIN, RW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1238 - 1239
  • [3] NON-VOLATILE ANALOG MEMORY IN MNOS CAPACITORS
    WITHERS, RS
    RALSTON, RW
    STERN, E
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (03): : 42 - 45
  • [4] ZrO2 Ferroelectric FET for Non-volatile Memory Application
    Liu, Huan
    Wang, Chengxu
    Han, Genquan
    Li, Jing
    Peng, Yue
    Liu, Yan
    Wang, Xingsheng
    Zhong, Ni
    Duan, Chungang
    Wang, Xinran
    Xu, Nuo
    Liu, Tsu-Jae King
    Hao, Yue
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1419 - 1422
  • [5] A ferroelectric fin diode for robust non-volatile memory
    Guangdi Feng
    Qiuxiang Zhu
    Xuefeng Liu
    Luqiu Chen
    Xiaoming Zhao
    Jianquan Liu
    Shaobing Xiong
    Kexiang Shan
    Zhenzhong Yang
    Qinye Bao
    Fangyu Yue
    Hui Peng
    Rong Huang
    Xiaodong Tang
    Jie Jiang
    Wei Tang
    Xiaojun Guo
    Jianlu Wang
    Anquan Jiang
    Brahim Dkhil
    Bobo Tian
    Junhao Chu
    Chungang Duan
    [J]. Nature Communications, 15
  • [6] Retention Analysis of a Non-Volatile Ferroelectric Memory Device
    John, Caroline S.
    Macleod, Todd C.
    Evans, Joe
    Ho, Fat D.
    [J]. INTEGRATED FERROELECTRICS, 2012, 140 : 23 - 34
  • [7] Non-volatile memory based on the ferroelectric photovoltaic effect
    Guo, Rui
    You, Lu
    Zhou, Yang
    Lim, Zhi Shiuh
    Zou, Xi
    Chen, Lang
    Ramesh, R.
    Wang, Junling
    [J]. NATURE COMMUNICATIONS, 2013, 4
  • [8] A ferroelectric fin diode for robust non-volatile memory
    Feng, Guangdi
    Zhu, Qiuxiang
    Liu, Xuefeng
    Chen, Luqiu
    Zhao, Xiaoming
    Liu, Jianquan
    Xiong, Shaobing
    Shan, Kexiang
    Yang, Zhenzhong
    Bao, Qinye
    Yue, Fangyu
    Peng, Hui
    Huang, Rong
    Tang, Xiaodong
    Jiang, Jie
    Tang, Wei
    Guo, Xiaojun
    Wang, Jianlu
    Jiang, Anquan
    Dkhil, Brahim
    Tian, Bobo
    Chu, Junhao
    Duan, Chungang
    [J]. NATURE COMMUNICATIONS, 2024, 15 (01)
  • [9] Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch
    John, Caroline S.
    MacLeod, Todd C.
    Evans, Joe
    Ho, Fat D.
    [J]. INTEGRATED FERROELECTRICS, 2012, 132 : 76 - 81
  • [10] Overview: Ferroelectric non-volatile memory research at NEC
    Abe, H
    Endo, N
    Watanabe, H
    [J]. NEC RESEARCH & DEVELOPMENT, 1999, 40 (02): : 203 - 205
12345