A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

被引：4
|
作者：
Begori-Lours, L. [1 ]
Halter, M. [1 ,2 ]
Pirieda, D. Davila [1 ]
Bragaglia, V [1 ]
Popoff, Y. [1 ,2 ]
La Porta, A. [1 ]
Jubiri, D. [1 ]
Fompeyririe, J. [1 ,3 ]
Offreiri, B. J. [1 ]
机构：
[1] IBM Res GmbH, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
[2] Swiss Fed Inst Technol, Zurich, Switzerland
[3] Lumiphase AG, Zurich, Switzerland
来源：
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2021年
关键词：
D O I：
10.1109/IMW51353.2021.9439611
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (-375 degrees C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neura 1 network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.
引用
收藏
页码：36 / 39
页数：4
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