Temperature-dependent carrier-phonon coupling in topological insulator Bi2Se3

被引：26
|
作者：
Lai, Yi-Ping [1 ]
Chen, Hsueh-Ju [2 ]
Wu, Kuang-Hsiung [2 ]
Liu, Jia-Ming [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Natl Chiao Tung Univ, Dept Elect, Hsinchu 300, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 23期
关键词：
RELAXATION; ELECTRONS; DYNAMICS; BI2TE3; RAMAN;
D O I：
10.1063/1.4904009
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Temperature-dependent (11.0K +/- 294.5 K) carrier-phonon coupling in Bi2Se3 is investigated by ultrafast pump-probe spectroscopy. The rise time of the differential reflectivity is interpreted by a combined effect of electron temperature relaxation and hot-phonon lifetime. The electron-phonon coupling constant of the bulk state (lambda = 0.63 +/- 0.05) is deduced from theoretical fitting. Increasing hot-phonon lifetime with decreasing temperature is attributed to a decreasing phonon-phonon collision rate. A complete analysis of the thermalization process is presented. Understanding carrier and phonon dynamics is essential for future optoelectronic and spintronic applications of topological insulators. (C) 2014 AIP Publishing LLC.
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页数：5
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