Temperature-dependent carrier-phonon coupling in topological insulator Bi2Se3

被引：26

作者：

Lai, Yi-Ping ^{[1
]}

Chen, Hsueh-Ju ^{[2
]}

Wu, Kuang-Hsiung ^{[2
]}

Liu, Jia-Ming ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Natl Chiao Tung Univ, Dept Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 23期

关键词：

RELAXATION; ELECTRONS; DYNAMICS; BI2TE3; RAMAN;

D O I：

10.1063/1.4904009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent (11.0K +/- 294.5 K) carrier-phonon coupling in Bi2Se3 is investigated by ultrafast pump-probe spectroscopy. The rise time of the differential reflectivity is interpreted by a combined effect of electron temperature relaxation and hot-phonon lifetime. The electron-phonon coupling constant of the bulk state (lambda = 0.63 +/- 0.05) is deduced from theoretical fitting. Increasing hot-phonon lifetime with decreasing temperature is attributed to a decreasing phonon-phonon collision rate. A complete analysis of the thermalization process is presented. Understanding carrier and phonon dynamics is essential for future optoelectronic and spintronic applications of topological insulators. (C) 2014 AIP Publishing LLC.

引用

页数：5

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