Low temperature growth of highly crystallized ZnO:Al films by ultrasonic spray pyrolysis from acetylacetone salt

被引:29
|
作者
Xu, Jiwen [1 ]
Wang, Hua [1 ,2 ]
Yang, Ling [1 ]
Jiang, Minghong [1 ]
Wei, Shuai [1 ]
Zhang, Tingting [1 ]
机构
[1] Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Guangxi, Peoples R China
[2] Guilin Univ Elect Technol, Guangxi Key Lab Informat Mat, Guilin 541004, Guangxi, Peoples R China
关键词
Ultrasonic spray pyrolysis; AZO films; Acetylacetonate; Sheet resistance; Transmittance; SOL-GEL PROCESS; CHEMICAL-VAPOR-DEPOSITION; AL THIN-FILMS; SUBSTRATE-TEMPERATURE; ELECTRICAL-PROPERTIES; TRANSPARENT CONDUCTORS; OPTICAL-PROPERTIES;
D O I
10.1016/j.mseb.2010.02.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-quality ZnO:Al films were deposited on glass substrates at a relatively low temperature of 300 degrees C by ultrasonic spray pyrolysis. Zn(acac)(2) and Al(acac)(3) acted as zinc and aluminum source, which dissolved in ethanol-water solution. The influences of aluminum concentration and vacuum annealing on microstructure. electrical and optical properties were investigated by XRD. SEM, EDS. four-point probe and visible spectroscopy. The experimental results shown that ZnO:Al films exhibit stronger (1 0 1) preferred orientation and have lenticular-like grain morphology. The resistivity as low as 4.3 x 10(-1) Omega cm for as-deposited films was obtained at the 4 at.% doping concentration, which can be decreased to 10(-2) Omega cm level by post-deposited vacuum annealing. The average transmittance of as-deposited films was nearly 80% in the visible range, and that of 4 at.% doped ZnO films reduced to 60% after vacuum annealing at 550-600 degrees C. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:182 / 186
页数:5
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