Preparation of Al Doped ZnO transparent conductive films by ultrasonic spray pyrolysis

被引:0
|
作者
Yan, Zhi-Chen [1 ]
Zhang, Hai-Ming [1 ]
Gao, Bo [1 ]
Zhu, Yan-Jun [1 ]
机构
[1] School of Science, Tianjin Polytechnic University, Tianjin 300160, China
关键词
Conductive films - II-VI semiconductors - Zinc sulfide - X ray diffraction - Zinc - Semiconductor doping - Spray pyrolysis - Thin films - Glass substrates - Zinc oxide - Aluminum - Hole concentration - Optical properties - Film preparation;
D O I
暂无
中图分类号
学科分类号
摘要
The ZnO:Al thin films with different Al doping concentrations were fabricated on glass substrates by ultrasonic spray pyrolysis method. The morphologies, crystal structures and optical properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), reflection spectra (Res), and four-point probe, respectively. The SEM results indicate that the amount of hole on the surface increases and the surface soomthness decreases as Al concentration increasing. The XRD patterns demonstrate that when the molar ratio of Zn to Al is 100:5, the AZO thin films have wurtzite structure with a preferential c-axis orientation. The PL spectra reveal that the NBE-peaks and DLE-peaks are observed in the AZO films with different Al doping concentration. The NBE-peaks show first blue-moved to a later red-shift as Al doping concentration increasing. Reflection spectra showed that all the samples had low reflectivity in visible region. Square resistance results indicate the AZO thin films have good electrical conductivity when the molar ration of Zn to Al is 100:5.
引用
收藏
页码:1376 / 1380
相关论文
共 50 条
  • [1] Preparation of transparent, conductive ZnO:Co and ZnO:In thin films by ultrasonic spray method
    Benramache S.
    Benhaoua B.
    Bentrah H.
    Journal of Nanostructure in Chemistry, 2013, 3 (1)
  • [2] DEVELOPMENT OF TRANSPARENT AND CONDUCTIVE ZNO FILMS BY SPRAY PYROLYSIS
    GOYAL, DJ
    AGASHE, C
    TAKWALE, MG
    MARATHE, BR
    BHIDE, VG
    JOURNAL OF MATERIALS SCIENCE, 1992, 27 (17) : 4705 - 4708
  • [3] Ultrasonic spray pyrolysis-induced growth of highly transparent and conductive F, Cl, Al, and Ga co-doped ZnO films
    Yang, Fu
    Song, Jianmin
    Chen, Xiaoyang
    Lu, Xi
    Li, Jianhang
    Xue, Qianqian
    Han, Bin
    Meng, Xudong
    Li, Junjie
    Wang, Yanfeng
    SOLAR ENERGY, 2021, 228 : 168 - 174
  • [4] Preparation of ZnO:In transparent conductive oxide thin films for silicon thin film solar cell by ultrasonic spray pyrolysis
    Jiao, Baochen
    Zhang, Xiaodan
    Fan, Zhenghai
    Wei, Changchun
    Sun, Jian
    Zhao, Ying
    Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2011, 39 (12): : 2008 - 2012
  • [5] Preparation of ZnO-doped Al films by spray pyrolysis technique
    Kaid, M. A.
    Ashour, A.
    APPLIED SURFACE SCIENCE, 2007, 253 (06) : 3029 - 3033
  • [6] Preparation and characterization of Al doped ZnO thin films by spray pyrolysis
    Hadri, Adil
    Loghmarti, Mohamed
    Mzerd, Ahmed
    Taibi, Mhamed
    2014 INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC), 2014, : 61 - 65
  • [7] Elaboration of Transparent Undoped ZnO and Al-Doped ZnO Thin Films by Spray Pyrolysis and their Properties
    Rahmane, Saad
    Aida, Mohamed Salah
    Chala, Abdelouahad
    Ben Temam, Hachemi
    Djouadi, Abdou
    PLASMA PROCESSES AND POLYMERS, 2007, 4 : S356 - S358
  • [8] Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
    Abdelouahab Gahtar
    Said Benramache
    Boubaker Benhaoua
    Foued Chabane
    Journal of Semiconductors, 2013, 34 (07) : 26 - 30
  • [9] Preparation of transparent conducting ZnO: Al films on glass substrates by ultrasonic spray technique
    Gahtar, Abdelouahab
    Benramache, Said
    Benhaoua, Boubaker
    Chabane, Foued
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (07)
  • [10] Preparation of transparent conducting ZnO:Al films on glass substrates by ultrasonic spray technique
    Abdelouahab Gahtar
    Said Benramache
    Boubaker Benhaoua
    Foued Chabane
    Journal of Semiconductors, 2013, (07) : 26 - 30