Compact amorphous-silicon visible-light monitor integrated in silicon nitride waveguides

被引:0
|
作者
De Vita, Christian [1 ]
Klitis, Charalambos [2 ]
Codreanu, Nina [1 ,3 ,4 ]
Ferrari, Giorgio [1 ]
Sorel, Marc [2 ]
Melloni, Andrea [1 ]
Morichetti, Francesco [1 ]
机构
[1] Politecn Milan, Dept Elect, Informat & Bioengn DEIB, I-20133 Milan, Italy
[2] Univ Glasgow, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Scotland
[3] Delft Univ Technol, Dept Quantum Nanosci, QuTech, Delft, Netherlands
[4] Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands
关键词
optical waveguides; amorphous silicon; integrated detectors; visible light; photonic integrated circuits;
D O I
10.1109/GFP51802.2021.9673949
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work reports on the realization of an amorphous silicon visible-light detector integrated in Si3N4 waveguides. The device is very compact (< 40 mu m), has a responsivity of about 10 mA/W and a sensitivity of -40 dBm.
引用
收藏
页数:2
相关论文
共 50 条
  • [21] INVESTIGATION OF THE SILICON-NITRIDE ON HYDROGENATED AMORPHOUS-SILICON INTERFACE
    GELATOS, AV
    KANICKI, J
    AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 729 - 734
  • [22] SILICON-NITRIDE AMORPHOUS-SILICON INTERFACES IN AN MIS JUNCTION
    HATANAKA, Y
    KAWAI, S
    SUZUKI, Y
    ASAI, Y
    SHIMAOKA, G
    APPLIED SURFACE SCIENCE, 1988, 33-4 : 792 - 796
  • [23] AMORPHOUS-SILICON INTEGRATED-CIRCUIT
    MATSUMURA, M
    HAYAMA, H
    PROCEEDINGS OF THE IEEE, 1980, 68 (10) : 1349 - 1350
  • [24] AMORPHOUS-SILICON INTEGRATED-CIRCUIT
    MATSUMURA, M
    HAYAMA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2194 - 2195
  • [25] INTERFACE EFFECTS IN AMORPHOUS-SILICON NITRIDE MULTILAYERS
    TSAI, CC
    THOMPSON, MJ
    STREET, RA
    STUTZMANN, M
    PONCE, F
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 995 - 998
  • [26] A STUDY OF DEFECTS IN NANOSTRUCTURED AMORPHOUS-SILICON NITRIDE
    WANG, T
    ZHANG, L
    MO, CM
    HU, JT
    XIE, CY
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (02): : 303 - 307
  • [27] SUBSTITUTIONAL AND INTERSTITIAL DOPING OF AMORPHOUS-SILICON NITRIDE
    DUNNETT, B
    LECOMBER, PG
    SPEAR, WE
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (04): : 483 - 492
  • [28] IR STUDY OF AMORPHOUS-SILICON NITRIDE FILMS
    LUONGO, JP
    APPLIED SPECTROSCOPY, 1984, 38 (02) : 195 - 199
  • [29] PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS
    ALVAREZ, F
    CHAMBOULEYRON, I
    SOLAR ENERGY MATERIALS, 1984, 10 (02): : 151 - 170
  • [30] CRYSTALLIZATION BEHAVIOR OF AMORPHOUS-SILICON NITRIDE POWDER
    HOJO, J
    MAEDA, H
    KATO, A
    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1988, 96 (08): : 842 - 846