In-situ surface analyses of Si(111) electrodes in fluoride containing solutions during current oscillations

被引：0

作者：

Rauscher, S ^{[1
]}

Nast, O ^{[1
]}

Jungblut, H ^{[1
]}

Lewerenz, HJ ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Abt CG, D-14109 Berlin, Germany

来源：

CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V | 1998年 / 35卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electrochemically induced current oscillations of n- and p-type Si(111) in fluoride containing solutions and the corresponding chemical, electronical and morphological variations are investigated by different in-situ techniques: fast Fourier transform infrared spectroscopy, microwave reflectivity and atomic force microscopy. An oscillating behavior exhibiting the same frequency as the current is observed for the absorption due to Si-O bindings, the reflected microwave signal and the surface roughness. The results are discussed in terms of a competition between oxidation of silicon and oxide etching.

引用

页码：439 / 446

页数：8

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