In-situ surface analyses of Si(111) electrodes in fluoride containing solutions during current oscillations

被引：0
|
作者：
Rauscher, S [1 ]
Nast, O [1 ]
Jungblut, H [1 ]
Lewerenz, HJ [1 ]
机构：
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Abt CG, D-14109 Berlin, Germany
来源：
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V | 1998年 / 35卷
关键词：
D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Electrochemically induced current oscillations of n- and p-type Si(111) in fluoride containing solutions and the corresponding chemical, electronical and morphological variations are investigated by different in-situ techniques: fast Fourier transform infrared spectroscopy, microwave reflectivity and atomic force microscopy. An oscillating behavior exhibiting the same frequency as the current is observed for the absorption due to Si-O bindings, the reflected microwave signal and the surface roughness. The results are discussed in terms of a competition between oxidation of silicon and oxide etching.
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页码：439 / 446
页数：8
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